Femtosecond Spectroscopy of Magneto-Excitons

D. Chemla
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Abstract

Recently, quasi-2D excitonic (X) effects have been investigated extensively in semiconductor quantum well (QW), resulting in fundamental advances in our understanding of the effects of dimensionality reduction from 3D to 2D on the optical response of semiconductors, and have lead to numerous new applications in optoelectronic [1]. Efforts to make new semiconductor structures where electronic states are further confined in quasi-0 or quasi-1 dimensions, have had only very limited success because of the difficulty of obtaining narrow size-distribution of defect free samples. However, electronic states strongly confined in all dimensions, in material of excellent uniformity and optical quality, can be obtained by immersing a high quality QW well in a perpendicular magnetic field [2,3]. In such a situation, the crystal band discontinuities confine the electronic states in the direction perpendicular to the QW. In the QW plane, in addition to the Coulomb potential, -e2/εor, the e-h pairs experience the confinement of the quadratic-potential, (eHr)2/8mc2, imposed by the magnetic field, H. The relative strength of two confining potentials is measured by the dimensionless parameter, λ = (ao/lc)2, where ao is the Bohr radius and lc = (c/eH)1/2 is the cyclotron radius. The e-h pairs then form magneto-excitons (MX), which extrapolate continuously between quasi-2D excitons (λ = 0) and quasi-0D Landau levels (λ → ∞).
磁激子飞秒光谱学
最近,准二维激子(X)效应在半导体量子阱(QW)中得到了广泛的研究,使我们对从3D降维到2D对半导体光学响应的影响的理解取得了根本性的进展,并在光电领域产生了许多新的应用[1]。由于难以获得无缺陷样品的窄尺寸分布,制造电子态进一步限制在准0或准1维的新半导体结构的努力只取得了非常有限的成功。然而,在具有优异均匀性和光学质量的材料中,通过将高质量量子阱浸入垂直磁场中可以获得在所有维度上都被强烈限制的电子态[2,3]。在这种情况下,晶体带的不连续将电子态限制在与量子势垂直的方向上。在QW平面上,除了库仑势-e2/εor外,e-h对还受到磁场h施加的二次势(eHr)2/8mc2的约束,两个约束势的相对强度通过无量纲参数λ = (ao/lc)2来测量,其中ao为玻尔半径,lc = (c/eH)1/2为回旋半径。然后e-h对形成磁激子(MX),在准2d激子(λ = 0)和准0d朗道能级(λ→∞)之间连续外推。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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