A. Bhalla, J. Gladish, A. Polny, P. Sargeant, G. Dolny
{"title":"High performance wide trench IGBTs for motor control applications","authors":"A. Bhalla, J. Gladish, A. Polny, P. Sargeant, G. Dolny","doi":"10.1109/ISPSD.1999.764039","DOIUrl":null,"url":null,"abstract":"IGBTs with wide trench widths offer the possibility of an improved trade-off between conduction and switching loss due to the injection enhancement effect, while preserving the devices' short-circuit withstand capability. This makes them promising candidates for motor control applications. 600 V IGBTs with trench widths of 8-12 /spl mu/m have been successfully fabricated with excellent electrical characteristics. The critical trench shaping process is accomplished by the use of a long LOCOS-like oxidation after the deep and wide trench has been etched. They offer low on-state voltage drops, low turn-off losses, square RBSOA and good short-circuit capability.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
IGBTs with wide trench widths offer the possibility of an improved trade-off between conduction and switching loss due to the injection enhancement effect, while preserving the devices' short-circuit withstand capability. This makes them promising candidates for motor control applications. 600 V IGBTs with trench widths of 8-12 /spl mu/m have been successfully fabricated with excellent electrical characteristics. The critical trench shaping process is accomplished by the use of a long LOCOS-like oxidation after the deep and wide trench has been etched. They offer low on-state voltage drops, low turn-off losses, square RBSOA and good short-circuit capability.
由于注入增强效应,具有宽沟槽宽度的igbt可以改善传导和开关损耗之间的权衡,同时保持器件的抗短路能力。这使它们成为电机控制应用的有希望的候选人。成功制备了沟槽宽度为8-12 /spl mu/m的600 V igbt,具有良好的电气特性。关键的沟槽成型过程是在深而宽的沟槽被蚀刻后,通过使用长locos样氧化来完成的。它们具有低导通电压降、低关断损耗、方形RBSOA和良好的短路能力。