Effect of FIB milling on MEMS SOI cantilevers

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472412

C. Venkatesh, P. P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, M. Martyniuk, A. Keating, G. A. Umama-Membreno, K. Silva, J. Dell, L. Faraone

引用次数: 0

Abstract

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

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FIB铣削对MEMS SOI悬臂梁的影响

研究了聚焦离子束(FIB)铣削在绝缘体上硅(SOI)晶圆上制造悬臂梁时产生的应力。铣削产生的应力梯度范围从-10MPa/μm到-120MPa/μm，这取决于悬臂梁距离铣削点的位置。对铣削悬臂梁的应力进行了模拟计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

COMMAD 2012

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