Modeling and Optimization of Advanced 3D NAND Memory

Abstract

Development of a new complex technology such as 3D NAND requires significant efforts in terms of materials screening, process tuning, and device design leading to fabrication and characterization of many test wafers with significant time-to-market cost. In this context, modeling can help accelerate 3D NAND technology development. Therefore, in this work, modeling platform is used to investigate such devices. Cross-talk (or cell-to-cell interference) is one of the major concerns in NAND technology, preventing its further scaling. To reduce crosstalk between neighboring cells in this paper, we analyze a 3D NAND structure with separated charge trap regions and compare its performance with the conventional device having continuous charge trap region.