Fe doped semi-insulating indium phosphide substrate characterization for device applications

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752699

C. Grattepain, A. Huber

引用次数: 0

Abstract

The goal of this paper is the presentation of InP(Fe) characterization results obtained by etching technique on chemically angle polished samples (ETOCAPS) and secondary ion mass spectrometry (SIMS). Polishing quality of surfaces, internal crystal structures and chemical composition will studied of wafers from three suppliers of the world-market.

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器件应用中掺铁半绝缘磷化铟衬底的表征

本文的目的是介绍用刻蚀技术在化学角度抛光样品(etcaps)和二次离子质谱(SIMS)上获得的InP(Fe)表征结果。将研究来自世界市场三家供应商的晶圆表面抛光质量、内部晶体结构和化学成分。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 7th Conference on Semi-insulating III-V Materials,

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