Microstructure of fretting debris on tin-plated terminals

K. Mashimo, S. Yamazaki, Atsushi Shimoyamada, H. Nishikubo, Y. Hori, H. Sasaki
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引用次数: 2

Abstract

Observations of sliced cross sections after sliding was made with a scanning transmission electron microscope (STEM). The sliced samples were picked from the fretting debris on the surface of specimens. Recently, high-angle annular dark-field STEM (HAADF STEM) technology has been significantly advanced [5-7]. The resolution is sufficiently fine to distinguish sub — angstrom structures, because of the improvement in convergence of electron beam. In dark — field images, the brightness contrast owing to the difference between the masses of two elements is clearly recognized. Thus, the electrical contact resistance after sliding might be estimated based on these observations. The authors have built a three-dimensional resistance-calculation model based on STEM observations. Presently, the observations are two-dimensional; therefore, the three-dimensional structure is built from discrete images with interpolation. The comparison of calculations and measurements is agreeable. The oxygen vacancies in SnO2 cannot be directly measured because of its low density. Though we can obtain the consistency of vacancies from the measurement of carrier density indirectly, this still adds uncertainty to the contact resistance simulation [4].
镀锡端子微动碎屑的微观结构
用扫描透射电镜(STEM)观察滑动后切片的横截面。切片样品是从试样表面的微动碎屑中挑选出来的。近年来,高角度环空暗场STEM (HAADF STEM)技术取得了显著进展[5-7]。由于电子束收敛性的提高,分辨率足以分辨亚埃结构。在暗场图像中,由于两个元素的质量差异而产生的亮度对比是清晰可见的。因此,滑动后的电接触电阻可以根据这些观察来估计。作者基于STEM观测建立了一个三维电阻计算模型。目前,观测是二维的;因此,三维结构是由离散图像通过插值建立的。计算和测量的比较是令人满意的。由于SnO2的密度低,不能直接测量其氧空位。虽然我们可以间接地从载流子密度的测量中得到空位的一致性,但这仍然给接触电阻模拟增加了不确定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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