Correlation between trap characterization by drain conductance dispersion and current transient spectroscopy in InAlAs/InP HFET

Abstract

Low frequency trapping effects in InP doped channel HFETs were investigated by current transient spectroscopy and conduction frequency dispersion measurements. By varying bias and temperatures, information on trap parameters and spatial localization can be obtained. Main dispersion effects ate attributed to InP growth related defects in the channel or at the channel/buffer interface.