RF-MEMS SPDT switch on silicon substrate for space applications

Abstract

The paper illustrates the activity carried out under an ESA contract for the development of a miniaturized RF-MEMS SPDT switch and switch matrix using micromachining technology on a silicon substrate for power applications. A manufacturing procedure, based on an eight masks process, has been set up. At present, a broadband single-pole-double-throw (SPDT) switch operating in the 0-30 GHz frequency range has been fabricated and measured. Isolation of about -40 dB and insertion loss better than -0.7 dB have been obtained.