{"title":"A highly-tunable 12 GHz quadrature LC-VCO in SiGe BiCMOS process","authors":"A. L. Coban, K. Ahmed, C. Chang","doi":"10.1109/VLSIC.2001.934212","DOIUrl":null,"url":null,"abstract":"This paper describes a 12 GHz fully-integrated, fully-differential quadrature LC VCO. Fabricated in a 0.35 /spl mu/m SiGe BiCMOS process with 55 GHz f/sub T/, the oscillator achieves 37% tuning range (9.62 to 14.0 GHz) and exhibits 113.5 and -112.3 dBc/Hz phase noise at 10 MHz away from 11 and 13 GHz oscillation frequencies, respectively. The oscillator draws 39 mA current from a 3.3 V supply and occupies 0.36 mm/sup 2/ active die area.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2001.934212","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
This paper describes a 12 GHz fully-integrated, fully-differential quadrature LC VCO. Fabricated in a 0.35 /spl mu/m SiGe BiCMOS process with 55 GHz f/sub T/, the oscillator achieves 37% tuning range (9.62 to 14.0 GHz) and exhibits 113.5 and -112.3 dBc/Hz phase noise at 10 MHz away from 11 and 13 GHz oscillation frequencies, respectively. The oscillator draws 39 mA current from a 3.3 V supply and occupies 0.36 mm/sup 2/ active die area.