B. Opitz, A. Kohl, A. Behres, K. Mertens, K. Heime, H. Schmitt
{"title":"Wannier-Stark effect in Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices on InP","authors":"B. Opitz, A. Kohl, A. Behres, K. Mertens, K. Heime, H. Schmitt","doi":"10.1109/ICIPRM.1996.492023","DOIUrl":null,"url":null,"abstract":"We observed the Wannier-Stark effect in MOVPE-grown strain balanced Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We observed the Wannier-Stark effect in MOVPE-grown strain balanced Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/ superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data.