Performance Analysis of Double Gated GaAs-Ge Based Hetero Tunnel Field Effect Transistor

Abstract

In this paper, the impact of different hetero materials on double-gate Tunnel Field Effect Transistor has been reported. In this context, we have considered two gates, namely, control and polarity gate; implemented using appropriate work function for the formation of p-i-n gated regions. Since, the ON state current of Tunnel Field Effect Transistor is inferior, therefore, a hetero material, GaAs-Ge, has been considered to improve the ON-state and reduce the ambipolar current. This combination of GaAs in the drain-channel and Ge at the source region, respectively, provides better switching ratio and sub-threshold slope as compared with other material combinations. The proposed structure can prove to be useful for ultra low power analog and RF applications. All simulated results have been performed using TCAD device simulator.