{"title":"A 9-bit 50MS/s asynchronous SAR ADC in 28nm CMOS","authors":"T. Cao, S. Aunet, T. Ytterdal","doi":"10.1109/NORCHP.2012.6403105","DOIUrl":null,"url":null,"abstract":"In this paper, a design of an asynchronous differential SAR ADC is presented. The ADC uses a dynamic two-stage comparator with a current source to improve linearity, a digital SAR control logic, bootstrapped sampling switches with body effect reduction, and a charge redistribution differential DAC with a monotonic capacitor switching procedure where the metal-metal capacitor unit is only 1fF for high power efficiency. At a sample rate of 50MS/s and a supply voltage of 1V, the 9-bit SAR ADC achieves an ENOB of 8.84 bit and consumes 45 μW, resulting in an energy efficiency of 2.01 fJ/conversion-step. The circuits are designed and simulated with parasitic models using a commercially available 28nm bulk CMOS process.","PeriodicalId":332731,"journal":{"name":"NORCHIP 2012","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NORCHIP 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2012.6403105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
In this paper, a design of an asynchronous differential SAR ADC is presented. The ADC uses a dynamic two-stage comparator with a current source to improve linearity, a digital SAR control logic, bootstrapped sampling switches with body effect reduction, and a charge redistribution differential DAC with a monotonic capacitor switching procedure where the metal-metal capacitor unit is only 1fF for high power efficiency. At a sample rate of 50MS/s and a supply voltage of 1V, the 9-bit SAR ADC achieves an ENOB of 8.84 bit and consumes 45 μW, resulting in an energy efficiency of 2.01 fJ/conversion-step. The circuits are designed and simulated with parasitic models using a commercially available 28nm bulk CMOS process.