Y. Hayakawa, A. Himeno, R. Yasuhara, Werner Boullart, E. Vecchio, T. Vandeweyer, Thomas Witters, D. Crotti, Malgorzata Jurczak, S. Fujii, S. Ito, Y. Kawashima, Yuichiro Ikeda, A. Kawahara, K. Kawai, Z. Wei, S. Muraoka, K. Shimakawa, T. Mikawa, S. Yoneda
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引用次数: 59
Abstract
For 28-nm embedded application, we have proposed a TaOx-based ReRAM with precise filament positioning and high thermal stability. The cell was realized using several newly-developed process technologies and cell structures: low-damage etching, cell side oxidation and encapsulated cell structure. As a result, we succeeded for the first time in forming a filament at the cell center. In addition, we confirmed the feasibility of 20-nm cell size. Excellent reliability was achieved in 2-Mbit 40-nm ReRAM: 100k cycles and 10 years' retention at 85 °C was demonstrated.
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