Capacitorless memory devices using virtual junctions

F. Gámiz, S. Navarro, C. Navarro, C. Márquez, C. Sampedro, L. Donetti, P. Galy, S. Cristoloveanu
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Abstract

Electrostatic doping (ED) offers an alternative to chemical doping in nanometer-scale devices. Recent works have shown the applicability of ED in a host of devices based on different materials ranging from Si and ultrahin fully depleted Silicon-on-Insulator layers to carbon nanotubes, graphene, and other 2D semiconductors, specially transition metal dichalcogenides (TMDs) [1] . In this work, we will demonstrate the application of electrostatic doping to form virtual junctions in an undoped ultrathin Silicon on Insulator layer, which can be operated as a memory device.
使用虚拟结的无电容存储器
静电掺杂(ED)为纳米级器件的化学掺杂提供了一种替代方法。最近的研究表明,从硅和超薄完全耗尽绝缘体上硅层到碳纳米管、石墨烯和其他2D半导体,特别是过渡金属二硫族化合物(TMDs) [1], ED在许多基于不同材料的器件中都具有适用性。在这项工作中,我们将展示静电掺杂在未掺杂的超薄绝缘体上硅层中形成虚拟结的应用,该超薄绝缘体层可以用作存储器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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