Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972759

Shui-Qing Yu, Yiyin Zhou, Huong Tran, Baohua Li, S. Ghetmiri, A. Mosleh, M. Mortazavi, W. Du, G. Sun, R. Soref, J. Margetis, J. Tolle

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Abstract

GeSn DHS and QW lasers and photoconductors have been investigated. For laser, the maximum operation temperature of 270 K and wavelength of 3.5 µm were achieved; for detector, spectral cut-off was measured at 3.6 µm.

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SiGeSn技术在中红外集成光子学中的应用进展

研究了GeSn、DHS和QW激光器和光导体。激光器的最大工作温度为270 K，工作波长为3.5µm;检测器的光谱截止点为3.6µm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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