S. Ouzounov, E. Roza, H. Hegt, G. V. D. Weide, A. Roermund
{"title":"CMOS V-I converter with 75dB SFDR and 360/spl mu/W power consumption","authors":"S. Ouzounov, E. Roza, H. Hegt, G. V. D. Weide, A. Roermund","doi":"10.1109/ESSCIR.2004.1356661","DOIUrl":null,"url":null,"abstract":"This work describes a new circuit solution for a linear, CMOS voltage-to-current converter (V-I converter or transconductor). The circuit utilizes a combination of cross-coupling and local resistive feedback for a significant, simultaneous suppression of the third and the fifth order harmonic distortion components in the transconductor characteristics. The transistor implementation is presented and a prototype VI converter is realised in a digital 0.18 /spl mu/m CMOS technology. The measured SFDR is 75 dB in a frequency band of 10 MHz. The circuit occupies 0.02 mm/sup 2/ and dissipates 360 /spl mu/W.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This work describes a new circuit solution for a linear, CMOS voltage-to-current converter (V-I converter or transconductor). The circuit utilizes a combination of cross-coupling and local resistive feedback for a significant, simultaneous suppression of the third and the fifth order harmonic distortion components in the transconductor characteristics. The transistor implementation is presented and a prototype VI converter is realised in a digital 0.18 /spl mu/m CMOS technology. The measured SFDR is 75 dB in a frequency band of 10 MHz. The circuit occupies 0.02 mm/sup 2/ and dissipates 360 /spl mu/W.