High-efficiency InP-based HEMT MMIC power amplifier

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394430

A. Kurdoghlian, W. Lam, C. Chou, L. Jellian, A. Igawa, M. Matloubian, L. Larson, A. Brown, M. Thompson, C. Ngo

引用次数: 8

Abstract

High-efficiency monolithic Q-band power amplifiers were developed using InP based HEMT MMIC technology. The amplifiers demonstrated state-of-the-art power performance including 33% power-added efficiency and 26 dBm of output power at 44 GHz. This is the highest output power reported with such a high efficiency for InP-based HEMT MMIC power amplifiers at Q-bands. The intended application is communication terminals.<>

查看原文本刊更多论文

基于inp的高效率HEMT MMIC功率放大器

采用基于InP的HEMT MMIC技术开发了高效单片q波段功率放大器。该放大器展示了最先进的功率性能，包括33%的功率附加效率和44 GHz的26 dBm输出功率。这是基于inp的HEMT MMIC功率放大器在q波段具有如此高效率的最高输出功率。预期的应用是通信终端

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

15th Annual GaAs IC Symposium

自引率

0.00%

发文量