Experimental studies of SOI DTMOSFET for low-voltage low-power applications

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786091

Wu Chuanliang, C. Jianmin, Huang Chang, Hu Guicai, Li Yinbo, Xu Yangzhen

引用次数: 0

Abstract

The structure of DTMOSFET is proposed. SOI DTMOSFET devices and ring oscillators are designed and fabricated. The characteristics of DTMOS devices and the speed performance of DTMOS-based ring oscillators are discussed.

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SOI型DTMOSFET低压低功耗实验研究

提出了DTMOSFET的结构。设计并制作了SOI DTMOSFET器件和环形振荡器。讨论了DTMOS器件的特性和基于DTMOS的环形振荡器的速度性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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