Three-dimensional finite element simulation of semiconductor devices

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156066

E. Buturla, P. Cottrell, B. Grossman, K. Salsburg, M. Lawlor, C. McMullen

引用次数: 32

Abstract

Mobile carrier transport in semiconductors, simulated in three dimensions, using the finite element method, will be reported. The algorithm has been used to model the combined effect of short channel lengths and narrow channel widths on the threshold of an IGFET.

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半导体器件三维有限元模拟

在半导体中移动载波输运，在三维模拟，使用有限元方法，将报告。该算法已被用于模拟短通道长度和窄通道宽度对IGFET阈值的综合影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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