A Sextuple Cross-Coupled Dual-Interlocked-Storage-Cell based Multiple-Node-Upset Self-Recoverable Latch

Aibin Yan, Kuikui Qian, Jie Cui, Ningning Cui, Tianming Ni, Zhengfeng Huang, X. Wen
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引用次数: 2

Abstract

As transistor feature sizes continue to scale down, the susceptibility of integrated circuits to harsh-radiation induced multiple-node-upsets (MNUs), such as double-node upsets (DNUs) and triple-node upsets (TNUs), is increasing. This paper presents an MNU self-recoverable hardened latch (namely SCDMSH) based on sextuple cross-coupled dual-interlocked-storage-cells (DICEs). The latch consists of eight transmission gates and six interlocked DICE cells. Due to the interlocking mechanism constructed from single-node-upset-self-recoverable DICE cells, the latch can self-recover from any possible single node upset (SNU), DNU and TNU. Simulation results validate the SNU, DNU and TNU self-recoverability of the proposed latch. Simulation results also demonstrate that the SCDMSH latch can approximately save 49% silicon area at the cost of moderate delay and power, compared with the state-of-the-art TNU self-recoverable reference latch (TNURL) of the same-type.
基于多节点扰动的六重交叉耦合双互锁存储单元自恢复锁存器
随着晶体管特征尺寸的不断缩小,集成电路对强辐射诱导的多节点扰流(mnu),如双节点扰流(dnu)和三节点扰流(tnu)的易感性正在增加。提出了一种基于六个交叉耦合双互锁存储单元(DICEs)的MNU自恢复强化锁存器(SCDMSH)。闩锁由8个传输门和6个互锁的DICE单元组成。由于由单节点故障-自恢复的DICE单元构建的联锁机制,锁存器可以从任何可能的单节点故障(SNU)、DNU和TNU中自恢复。仿真结果验证了该锁存器的SNU、DNU和TNU自恢复能力。仿真结果还表明,与最先进的TNU自恢复参考锁存器(TNURL)相比,SCDMSH锁存器可以在中等延迟和功耗的代价下节省约49%的硅面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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