{"title":"A precision 140MHz relaxation oscillator in 40nm CMOS with 28ppm/°C frequency stability for automotive SoC applications","authors":"Dmytro Cherniak, R. Nonis, F. Padovan","doi":"10.1109/RFIC.2017.7969016","DOIUrl":null,"url":null,"abstract":"The need for high-frequency, low-power, wide temperature range, precision on-chip reference clock generation makes relaxation oscillator topology an attractive solution for various automotive applications. This paper presents for the first time a 140MHz relaxation oscillator with robust-against-process-variation temperature compensation scheme. The high-frequency relaxation oscillator achieves 28 ppm/°C frequency stability over the automotive temperature range from −40 to 175°C. The circuit is fabricated in 40nm CMOS technology, occupies 0.009 mm2 and consumes 294µW from 1.2V supply.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
The need for high-frequency, low-power, wide temperature range, precision on-chip reference clock generation makes relaxation oscillator topology an attractive solution for various automotive applications. This paper presents for the first time a 140MHz relaxation oscillator with robust-against-process-variation temperature compensation scheme. The high-frequency relaxation oscillator achieves 28 ppm/°C frequency stability over the automotive temperature range from −40 to 175°C. The circuit is fabricated in 40nm CMOS technology, occupies 0.009 mm2 and consumes 294µW from 1.2V supply.