A Low-Cost Soft Error Tolerant Read Circuit for Single/Multi-Level Cross-Point RRAM Arrays

Hossein Bardareh, Amir M. Hajisadeghi, H. Zarandi
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引用次数: 4

Abstract

Although RRAM as an emerging non-volatile memory has solved many dr awbacks of conventional memor ies, it has deficiencies needed to be maintained. The objective of this paper is to suppress the soft er ror susceptibility of CMOSbased peripheral read circuits for both SLC and MLC crosspoint RRAM arrays thr ough sizing of tr ansistor s with regard to area, power, and delay constr aints. The results revealed that the soft err or r ate (SER) has improved around 18.4 and 53.7 times mor e than the default sizing in case of fully-robust sizing besides minor area overhead for both SLC and MLC RRAM ar r ays, respectively. However, the static power and delay of MLC ar r ay are the overheads.
用于单/多级交叉点RRAM阵列的低成本软容错读电路
RRAM作为一种新兴的非易失性存储器,虽然解决了传统存储器的许多缺点,但也存在着需要维护的不足。本文的目的是通过考虑面积,功率和延迟约束的晶体管尺寸来抑制基于cmos的SLC和MLC交叉点RRAM阵列的外围读电路的软误差敏感性。结果显示,除了SLC和MLC RRAM的小面积开销外,在完全健壮的大小情况下,软错误率(SER)比默认大小分别提高了18.4倍和53.7倍。然而,MLC的静态功率和延迟往往是开销。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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