Design and optimisation of CMOS wideband amplifiers

1989 Proceedings of the IEEE Custom Integrated Circuits Conference Pub Date : 1989-05-15 DOI:10.1109/CICC.1989.56834

F. Op't Eynde, W. Sansen

引用次数: 24

Abstract

Several CMOS amplifier types are compared and optimized for high-frequency applications. Scaling laws are derived for the power consumption as a function of the gain bandwidth, the load capacitance and the second pole. It is shown that minor modifications on existing circuits can save over a factor of two of power consumption. A 3-μm wideband amplifier is presented with 150-MHz gain-bandwidth and 60° phase margin and with 30 mW of power consumption for a load capacitance of 2 pF

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CMOS宽带放大器的设计与优化

几种CMOS放大器类型进行了比较和优化的高频应用。推导了功耗作为增益带宽、负载电容和第二极的函数的标度规律。结果表明，对现有电路进行微小的修改可以节省两倍以上的功耗。提出了一种3 μm宽带放大器，增益带宽为150 mhz，相位裕度为60°，负载电容为2 pF，功耗为30 mW

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1989 Proceedings of the IEEE Custom Integrated Circuits Conference

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