S. Xu, D. Frey, T. Chen, A. Prejs, M. Anderson, J. Miller, T. Arell, M. Singh, R. Lertpiriyapong, A. Parish, R. Schrock, E. Demarest, A. Kini, J. Ryan
{"title":"Design and development of compact CDMA/WCDMA power amplifier module for high yield low cost manufacturing","authors":"S. Xu, D. Frey, T. Chen, A. Prejs, M. Anderson, J. Miller, T. Arell, M. Singh, R. Lertpiriyapong, A. Parish, R. Schrock, E. Demarest, A. Kini, J. Ryan","doi":"10.1109/CSICS.2004.1392483","DOIUrl":null,"url":null,"abstract":"A low cost compact (3 mm /spl times/ 3 mm) internally matched CDMA/WCDMA power amplifier module is designed with high-density-interconnection (HDI) laminate technology. Design methodologies for the power amplifier module are presented. Some advances in wafer processing technology are discussed. The PCS/IMT dual band WCDMA power amplifier achieves a typical 40% power-added-efficiency (PAE) at 27.5 dBm along with a -40 dBc linearity at 5 MHz offset frequency. At a low operating power of 16 dBm, 22% PAE can be achieved at V/sub cc/ = 1.5 V. Manufacturing yield issues are discussed as well.","PeriodicalId":330585,"journal":{"name":"IEEE Compound Semiconductor Integrated Circuit Symposium, 2004.","volume":"3 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Compound Semiconductor Integrated Circuit Symposium, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2004.1392483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A low cost compact (3 mm /spl times/ 3 mm) internally matched CDMA/WCDMA power amplifier module is designed with high-density-interconnection (HDI) laminate technology. Design methodologies for the power amplifier module are presented. Some advances in wafer processing technology are discussed. The PCS/IMT dual band WCDMA power amplifier achieves a typical 40% power-added-efficiency (PAE) at 27.5 dBm along with a -40 dBc linearity at 5 MHz offset frequency. At a low operating power of 16 dBm, 22% PAE can be achieved at V/sub cc/ = 1.5 V. Manufacturing yield issues are discussed as well.