Issues and challenges in ramp to production

Arun Shrimali, Anand Venkitachalam, Ravi Arora
{"title":"Issues and challenges in ramp to production","authors":"Arun Shrimali, Anand Venkitachalam, Ravi Arora","doi":"10.1109/ISQED.2005.72","DOIUrl":null,"url":null,"abstract":"As the world is moving toward the deep submicron (DSM) era, understanding silicon behavior is becoming more and more challenging. Models are getting complex and yet not able to reflect the actual silicon behavior. Hence some of the silicon issues cannot be replicated in circuit simulations. The problems found on silicon require the understanding of various tools and techniques available to observe and modify the die. A good understanding of these techniques and debug methodology is required to meet time to market goals. The devices used for mobile applications have stringent power requirements. The devices thus have power conservation modes during which the current drawn is extremely low of the order of tens of microamperes. This paper discusses the challenges and techniques used to identify the issues found in shutdown mode (a power conservation mode), which had to be addressed in order to ramp the device to production.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"14 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sixth international symposium on quality electronic design (isqed'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2005.72","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

As the world is moving toward the deep submicron (DSM) era, understanding silicon behavior is becoming more and more challenging. Models are getting complex and yet not able to reflect the actual silicon behavior. Hence some of the silicon issues cannot be replicated in circuit simulations. The problems found on silicon require the understanding of various tools and techniques available to observe and modify the die. A good understanding of these techniques and debug methodology is required to meet time to market goals. The devices used for mobile applications have stringent power requirements. The devices thus have power conservation modes during which the current drawn is extremely low of the order of tens of microamperes. This paper discusses the challenges and techniques used to identify the issues found in shutdown mode (a power conservation mode), which had to be addressed in order to ramp the device to production.
投产过程中的问题和挑战
随着世界向深亚微米(DSM)时代迈进,理解硅的行为变得越来越具有挑战性。模型变得越来越复杂,但仍不能反映硅的实际行为。因此,硅的一些问题不能在电路模拟中复制。在硅上发现的问题需要了解各种可用的工具和技术来观察和修改模具。很好地理解这些技术和调试方法是满足市场目标的必要条件。用于移动应用程序的设备具有严格的电源要求。因此,该器件具有功率守恒模式,在此期间,所消耗的电流极低,为数十微安的数量级。本文讨论了用于识别关机模式(一种节能模式)中发现的问题的挑战和技术,为了将设备投入生产,必须解决这些问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信