Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398181

B. Jagannathan, D. Greenberg, D. Sanderson, J. Rieh, J. Pekarik, J. Plouchart, G. Freeman

引用次数: 12

Abstract

DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production RFCMOS and BiCMOS technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.

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最先进的CMOS和SiGe射频晶体管的速度和功率性能比较

在IBM领先的量产RFCMOS和BiCMOS技术下，分别在90 nm和130 nm节点上比较了Si nfet和SiGe hbt的直流和射频特性。研究了实现低功耗电路运行的基本性能权衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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