{"title":"Behavioral modeling for RF and AMS","authors":"C. McAndrew, Brian Q. Chen","doi":"10.1109/CICC.2012.6330641","DOIUrl":null,"url":null,"abstract":"The continued increase in functionality and complexity of integrated circuits, especially the integration of analog and RF circuit blocks along with large amounts of digital circuitry, has increased the need for efficient simulation of large analog/mixed-signal (AMS) circuits. This is especially difficult and time-consuming for top-level verification, and for accurate simulation of the nonlinear behavior of high power RF circuits. This session includes three papers that address recent developments in modeling and simulation that expand the scope and improve the accuracy of models and simulation techniques for modern RF transistors and for large AMS systems.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2012.6330641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The continued increase in functionality and complexity of integrated circuits, especially the integration of analog and RF circuit blocks along with large amounts of digital circuitry, has increased the need for efficient simulation of large analog/mixed-signal (AMS) circuits. This is especially difficult and time-consuming for top-level verification, and for accurate simulation of the nonlinear behavior of high power RF circuits. This session includes three papers that address recent developments in modeling and simulation that expand the scope and improve the accuracy of models and simulation techniques for modern RF transistors and for large AMS systems.