Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

Abstract

Integrated high-power circuits are typically formed on Si, InP or GaAs substrates. Linear models are derived for the dependence of thermal resistance on temperature dependent thermal conductivity through backside temperature and self-heating. Applied to InP substrate devices, the model predictions are found to be within 5% of measurements for power levels to 3 mW//spl mu/m/sup 2/ and over a 165/spl deg/C substrate temperature range.