Improvement of Transconductance in double channel AlGaN/GaN HEMT

Abstract

A double channel AlGaN/GaN HEMT is developed at 0.6 µm gate length. In the double channel HEMT, there is formation of two carrier channel due to polarisation. In this paper along with the DC I-V characteristics the improvement in transconductance , gm, at 0.1 µm gatelength are optimized. At gate length (LG) = 0.1µm, the modified structure3 has improvement in gm of 59% with respect to structure2 when drain length (LD) is increased and source length (LS) is decreased.