A fully-integrated ultra-wideband power amplifier in CMOS Silicon on Sapphire technology

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 1900-01-01 DOI:10.1109/SIRF.2016.7445487

S. Helmi, Jie Cui, S. Mohammadi

引用次数: 2

Abstract

A fully-integrated ultra-wideband power amplifier (PA) for multi-mode multi-band applications is designed and implemented in a standard 0.25 μm Ultra-CMOS Silicon-on-Sapphire (SOS) technology. The PA consists of two series stacked Cascode configuration to achieve high output power while maintaining stability. The PA utilizes stacked transistor switches at the input to extend the operation bandwidth without affecting its saturated output power. The PA delivers a saturated output power (PSAT) of 27 dBm (0.5 W) over a frequency range of 1.8 to 3.4 GHz with power added efficiency (PAE) and drain efficiency (DE) of higher than 20% and 29% at a supply voltage of 7 V, respectively.

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一个完全集成的超宽带功率放大器在CMOS硅蓝宝石技术

采用标准的0.25 μm超cmos蓝宝石上硅(SOS)技术设计并实现了一款适用于多模多频段应用的全集成超宽带功率放大器(PA)。PA由两个串联堆叠的Cascode配置组成，在保持稳定性的同时实现高输出功率。放大器在输入端使用堆叠晶体管开关，在不影响其饱和输出功率的情况下延长工作带宽。在1.8 ~ 3.4 GHz频率范围内，PA的饱和输出功率(PSAT)为27 dBm (0.5 W)，在7v电源电压下，功率附加效率(PAE)和漏极效率(DE)分别高于20%和29%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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