Olli-Pekka Kilpi, Jun Wu, J. Svensson, E. Lind, L. Wernersson
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引用次数: 9
Abstract
We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and Ion=88 μA/μm at Ioff 1 nA/μm and Vd 0.5 V.
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