{"title":"Development of RF/microwave on-chip inductors using an organic micromachining process","authors":"R. Ramachandran, D. Newlin, A. Pham","doi":"10.1109/EPEP.2001.967620","DOIUrl":null,"url":null,"abstract":"Presents the design and development of on-chip inductors using an organic micromachining process for RF and microwave applications. The process employs an SU-8 negative photoresist for developing micromachined structures using standard lithography techniques and is compatible with post-IC process to integrate passive devices onto foundry-fabricated circuits. Our initial results demonstrate that a spiral inductor fabricated on Si using this technology achieves a measured Q-factor of 20 at 2.1 GHz. Further refinement of the process and design will increase the Q-factor to 60 as predicted by electromagnetic simulations. At the meeting we will present the design and development of various inductor topologies, including gridded ground planes, for achieving high Q-factors.","PeriodicalId":174339,"journal":{"name":"IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEP.2001.967620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
Presents the design and development of on-chip inductors using an organic micromachining process for RF and microwave applications. The process employs an SU-8 negative photoresist for developing micromachined structures using standard lithography techniques and is compatible with post-IC process to integrate passive devices onto foundry-fabricated circuits. Our initial results demonstrate that a spiral inductor fabricated on Si using this technology achieves a measured Q-factor of 20 at 2.1 GHz. Further refinement of the process and design will increase the Q-factor to 60 as predicted by electromagnetic simulations. At the meeting we will present the design and development of various inductor topologies, including gridded ground planes, for achieving high Q-factors.