Relaxation of strained-SOI substrates by RTA process

Abstract

Three different type strained-Si substrates, EPI, SGOI and SSOI, were evaluated by newly developed high-resolution UV-Raman spectroscopy. The structure relaxation occurred by RTA at 1050/spl deg/C. The Raman peak shifted toward larger wavenumber after RTA for SSOI, indicating strain relaxation. The peak shifted toward lower wavenumber in the case of EPI due to the Ge diffusion rather than strain relaxation. The SGOI showed complex characteristics of SSOI and EPI.