Effect of technology scaling on RF performance of the transistors fabricated by standard CMOS technology

Abstract

Cut-off frequency (f_T) of 300 GHz and 230 GHz for NMOS and PMOS is demonstrated for transistors with a gate length of 35 nm fabricated by 45 nm standard CMOS technology. Current gain (H₂₁) and noise (flicker and thermal) is improved with scaling down technology. Power gain (G_u) increase is slow down and even saturated at 45 nm as technology advances. Such saturation in power gain is attributed to rapid increase in g_ds (drain conductance). Additional efforts are required to reduce g_ds for continuous improvement in power gain with the scaling. V_th optimization can be one of options to achieve better g_ds.