Atomic-layer deposition for development of advanced electron devices

Abstract

This work resumes some of the most important results that have been obtained in our research group regarding the use of atomic-layer deposition (ALD) as the main thin-film deposition technique for metal oxides with high dielectric constant. ALD has been applied for the development of logic, memory, sensing and quantum technologies in which ultra-thin metal oxides (Al2O3, HfO2 and TiO2 with a physical thickness of less than 10nm), are the active part of the final devices under study.