Effect of annealing and drying temperature on TiO2 nanostructured film

Abstract

In the production of nanostructured TiO2, the annealing temperature for the film is differed to clarify that by the use of different temperature in annealing the film, the best temperature to get a good mobility for the current flow can be found. There are 7 samples with different drying temperature and different annealing temperature. The ones with different drying are not annealed and the other that has the same drying is discussed based on different annealing temperature. Which one will have the highest IV characterization. As further discovered that the as deposited without annealing have a quite thick film that it could not be characterized by Atomic Force Microscopy (AFM), so only the thinnest that is a 500°C annealed film can be characterized using AFM. The highest point of the current at 10V in the IV graph is 500 C annealing temperature of 6.06E-9 which then makes it the highest in conductivity at 3.37E-6. The current-voltage (I-V) measurement is used to study the electrical resistivity behaviour, hence the conductivity of the film.