An analysis on turn-off behaviour of 1.2kV NPT-CIGBT under clamped inductive load switching

Abstract

For the first time, this paper analyses the turn-off-behaviour of the planar 1.2 kV/25 A NPT-CIGBT under clamped inductive load switching in detail through experiment and simulation. Turn-off behaviour of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied, in order to observe the di/dt, dv/dt and turn-off energy loss of the device. Experimental results are shown at 25degC and 125degC. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.