{"title":"A sub - 2 dB noise figure wideband LNA in 65 nm CMOS for mobile TV applications","authors":"A. Youssef, A. Ismail, J. Haslett","doi":"10.1109/RWS.2010.5434173","DOIUrl":null,"url":null,"abstract":"A novel broadband CMOS LNA based on the noise-canceling approach has been designed and implemented in 65 nm CMOS technology. The noise-canceling mechanisms used in this LNA allow the achievement of a noise figure as low as 1.6 dB to be feasible across the VHF/UHF bands without using any inductors. The LNA has a gain greater than 36 dB and consumes only 18 mW of power.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2010.5434173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A novel broadband CMOS LNA based on the noise-canceling approach has been designed and implemented in 65 nm CMOS technology. The noise-canceling mechanisms used in this LNA allow the achievement of a noise figure as low as 1.6 dB to be feasible across the VHF/UHF bands without using any inductors. The LNA has a gain greater than 36 dB and consumes only 18 mW of power.