Transmission electron microscopy of Al-rich III-V oxides

Abstract

Transmission electron microscopy was used for the characterization of microstructure of wet oxidation of AlAs. Dense cubic /spl gamma/-Al/sub 2/O/sub 3/ was formed with a substantial shrinking after oxidation. Addition of a small amount of Ga (x=0.1) increased granularity of the oxide. Large pores were formed at the interface between the oxide and the low Al content layer. Arsenic accumulation near these pores, the interface, as well at the layer surface was found after oxidation. This study showed that properties of this oxide might be enhanced by the properties of GaAs rich in As (similar to low-temperature-grown-GaAs).