Physical modeling of transient enhanced diffusion in silicon

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.785990

K. Taniguchi, T. Saito, J. Xia, R. Kim

引用次数: 1

Abstract

Transient enhanced diffusion (TED) of boron atoms in superlattice Si wafers during thermal annealing were simulated using a comprehensive diffusion model. It was found that the model well predicts boron atoms segregate to (311) defects during thermal annealing and normal TED as well.

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硅中瞬态增强扩散的物理模拟

采用综合扩散模型模拟了硼原子在超晶格硅片热退火过程中的瞬态增强扩散。结果表明，该模型较好地预测了硼原子在热退火和普通TED过程中向(311)缺陷的偏析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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