RF Front End Module Architectures for 5G

F. Balteanu
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引用次数: 12

Abstract

Worldwide adoption of 3G/4G smartphones for more than 5 billion of people has been one of the main driving engine behind semiconductor industry. 5G is expected to bring higher data capacity, low latency and new RF hardware enhancements which will open the market for new application where our smartphones will be a conduit. CMOS lower features nodes as FinFET 7nm/14nm CMOS allow the computational power and lower power consumption required for the use of digital signal processing and RF digital calibration which are essential for 4G/5G modem and application processor technology. The goal of having a single die for the entire 4G/5G functionality has faded away to a more realistic partitioning where many RF and analogue blocks are integrated with other components such as RF acoustic filters in multiple RF front-endmodules. This paper presents RF front end architectures which will be part of 5G smartphones together with circuit and measurement details.
5G射频前端模块架构
全球超过50亿人采用3G/4G智能手机一直是半导体行业背后的主要驱动引擎之一。5G预计将带来更高的数据容量、低延迟和新的射频硬件增强,这将为我们的智能手机将成为渠道的新应用打开市场。作为FinFET 7nm/14nm CMOS的CMOS低特性节点允许使用数字信号处理和RF数字校准所需的计算能力和更低的功耗,这对于4G/5G调制解调器和应用处理器技术至关重要。为整个4G/5G功能提供单个芯片的目标已经消失为更现实的划分,其中许多RF和模拟块与多个RF前端模块中的RF声学滤波器等其他组件集成在一起。本文介绍了将成为5G智能手机一部分的射频前端架构,以及电路和测量细节。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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