Low temperature processing of dielectric perovskites for energy storage

Abstract

Since the report of high dielectric value was published for the calcium copper titanate of the stoichiometry CaCu3Ti4O12 (CCTO), several of its analogs such as Yittrium copper titanate Y2/3Cu3Ti4O12 (YCTO), Pr2/3Cu3Ti4O12 (PCTO) and several other compounds have been studied extensively. Most of these materials have demonstrated very high dielectric constants. However, the roadblock is their low resistivity. To overcome this problem, several approaches have been considered, including doping and substitution. In order to solve this problem, we have synthesized the stoichiometric composition and used low temperature processing to grow grains of La2/3Cu3Ti4O12 (LCTO) stoichiometric compound. LCTO with excess copper oxide was also prepared to determine its effect on the morphology and dielectric constant of the stoichiometric LCTO compound. In spite of the low melting point of copper oxide, we observed that excess copper oxide did not show any faster grain growth. Also, the dielectric constant of LCTO was lower than CCTO and unlike CCTO, LCTO showed significant changes as the function of frequency. The measured resistivity was slightly higher than CCTO.