A 0.65V, Ultra Low-Power CMOS Ultra-Wideband Low Noise Amplifier using Forward Body-Biasing for Biomedical Applications

Mohammed Adel, Usama Sayed, K. Yousef
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Abstract

An Ultra low-power ultra-wideband low noise amplifier (UWB-LNA) is presented in this paper. The proposed LNA utilizes a common gate input stage followed by a common source stage acting as an output stage (CGCS) in a current reuse configuration. Forward Body-Biasing (FBB) technique is adopted for ultra low-power dissipation. The design achieves high post-layout gain with a maximum of 12.5 dB and a minimum post-layout noise Figure of 3.9 dB. The proposed design drives only 1.68 mA from a 0. 65V power supply. Within the UWB frequency spectrum of interest, the input and output return loss are less than-10 dB and -6dB, respectively. This LNA circuit is designed and simulated in 130nm CMOS Technology.
一种用于生物医学应用的0.65V超低功耗CMOS超宽带低噪声正向体偏置放大器
介绍了一种超低功耗超宽带低噪声放大器。建议的LNA在当前重用配置中利用一个公共门输入级,然后是一个公共源级作为输出级(CGCS)。采用正向体偏置(FBB)技术实现超低功耗。该设计实现了高布局后增益,最大12.5 dB,最小布局后噪声系数为3.9 dB。所提出的设计仅驱动1.68 mA从一个0。65V电源。在UWB频谱范围内,输入和输出回波损耗分别小于10db和-6dB。该电路采用130nm CMOS工艺设计和仿真。
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