Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Abstract

ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.