M. Breil, J. Sanchez, P. Austin, J. Laur, J. Jalade, J. Quoirin
{"title":"Exploring Various MOS-Thyristor Associations for a New Power Integrated Function: the IGTH","authors":"M. Breil, J. Sanchez, P. Austin, J. Laur, J. Jalade, J. Quoirin","doi":"10.1109/ESSDERC.2000.194795","DOIUrl":null,"url":null,"abstract":"In this paper, various MOS-thyristor associations are investigated in order to develop a new integrated power switch : the IGTH, which combines a thyristor mode in the on-state and IGBT turn-on switching characteristics, allowing the turn-on current waveform control. This function offers the advantages of a thyristor on-state whilst reducing ElectroMagnetic Interference (EMI) due to hard switching modes. The physical behavior of the various MOS-thyristor associations are analized using 2D numerical simulations. An optimized device has been fabricated and experimental switching waveforms are presented.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, various MOS-thyristor associations are investigated in order to develop a new integrated power switch : the IGTH, which combines a thyristor mode in the on-state and IGBT turn-on switching characteristics, allowing the turn-on current waveform control. This function offers the advantages of a thyristor on-state whilst reducing ElectroMagnetic Interference (EMI) due to hard switching modes. The physical behavior of the various MOS-thyristor associations are analized using 2D numerical simulations. An optimized device has been fabricated and experimental switching waveforms are presented.