Fabrication of vertical tapers in polymer thin films by oxygen reactive ion etching with a shadow mask for photonic device applications

Antao Chen, F. I. Marti-Carrera, S. Garner, V. Chuyanov, W. Steier
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引用次数: 2

Abstract

The taper structure is the key component of an on-chip mode size transformer for efficient fiber coupling. The taper provides a smooth transition between two waveguide sections with different mode sizes with minimum radiation loss. The tapered mode size transformer has become a standard approach for efficient fiber coupling with semiconductor lasers and amplifiers[1]. Various taper fabrication techniques are developed for semiconductor and LiNbO3 devices[2-5], but most of them are not applicable to polymer waveguides. Oxygen reactive ion etching is the primary method to etch a polymer film. For most polymer waveguides, the major part of fiber coupling loss is due to the mode size mismatch between the waveguide and fiber in the vertical direction, therefore a vertical taper is needed to reduce the fiber coupling loss. In this paper, a reactive ion etching (RIE) technique with a shadow mask is demonstrated. A similar technique has been reported for etching submicron tapers in InP with methane plasma[5]. Our approach can effectively create tapers several microns deep and a few millimeters long with oxygen plasma which is required for multilayer polymer waveguide structures.
应用于光子器件的阴影掩膜氧反应离子蚀刻技术制备聚合物薄膜中的垂直锥体
锥形结构是片上模尺寸变压器实现高效光纤耦合的关键部件。锥形提供了两个波导段之间的平滑过渡,具有不同的模式尺寸和最小的辐射损失。锥形模尺寸变压器已成为与半导体激光器和放大器进行高效光纤耦合的标准方法[1]。针对半导体器件和LiNbO3器件,已经开发了多种锥度制造技术[2-5],但大多数都不适用于聚合物波导。氧反应离子蚀刻是蚀刻聚合物薄膜的主要方法。对于大多数聚合物波导,光纤耦合损耗的主要部分是由于波导与光纤在垂直方向上的模尺寸不匹配,因此需要一个垂直锥度来降低光纤耦合损耗。本文介绍了一种带有阴影掩膜的反应离子刻蚀(RIE)技术。类似的技术也被报道用甲烷等离子体在InP中蚀刻亚微米锥体[5]。我们的方法可以有效地用氧等离子体制造出几微米深、几毫米长的锥体,这是多层聚合物波导结构所需要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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