André B. Shibutani, M. de Souza, R. Trevisoli, R. Doria
{"title":"Junctionless Nanowire Transistors Based Common-Source Current Mirror","authors":"André B. Shibutani, M. de Souza, R. Trevisoli, R. Doria","doi":"10.1109/SBMicro50945.2021.9585731","DOIUrl":null,"url":null,"abstract":"In this article, a current mirror built with junctionless nanowire transistors (JNTs) is investigated for the first time. The study explores the influence of transistors’ width on the mirroring precision for input and output devices with different dimensions. The work has been performed through numerical simulations validated with experimental data and showed that the variation of devices’ width impacts the output characteristics differently from usually observed in current mirrors formed by inversion mode devices.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro50945.2021.9585731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this article, a current mirror built with junctionless nanowire transistors (JNTs) is investigated for the first time. The study explores the influence of transistors’ width on the mirroring precision for input and output devices with different dimensions. The work has been performed through numerical simulations validated with experimental data and showed that the variation of devices’ width impacts the output characteristics differently from usually observed in current mirrors formed by inversion mode devices.