A critical examination of the Mott transistor and emergent phase switches for electronics

Abstract

In this presentation, we will discuss device physics of Mott transistors, with emphasis on the following: device-quality correlated materials synthesis that requires reversible phase transitions; transistor fabrication with both solid state (e.g. hafnia) and ionic liquid gates; small signal device response and high frequency characteristics. The question of how to modulate transistor channel resistance at the high density limit will be considered in depth. Complementary learnings from two-terminal devices and electrical switching dynamics in coplanar waveguides will be discussed.