Fast and Accurate Library Generation Leveraging Deep Learning for OCV Modelling

Eunice Naswali, Namhoon Kim, Pravin Chandran
{"title":"Fast and Accurate Library Generation Leveraging Deep Learning for OCV Modelling","authors":"Eunice Naswali, Namhoon Kim, Pravin Chandran","doi":"10.1109/ISQED51717.2021.9424316","DOIUrl":null,"url":null,"abstract":"Statistical timing characterization for modeling On-Chip Variation (OCV) is critical in current technology nodes to avoid over-design and to improve design convergence and predictability. OCV characterization, however, is resource intensive as it involves running millions of Monte-Carlo spice simulations to cover different timing arcs for multiple cells in standard-cell library. We have developed a neural network model that fully comprehends multiple cell types to model cell propagation delays as well as OCV sigma at target process-voltage-temperature (PVT) corners with a significantly reduced number of simulations. The proposed method generates Liberty Variation Format (LVF) models which are the latest and most accurate representation of OCV margin in the industry’s standard tools and flows.On extensive testing with 7 million OCV delay values in 10nm node, we attained 60% reduction in runtime while maintaining prediction-error less than 5% for 99.98% arcs which can be used for early timing integration.","PeriodicalId":123018,"journal":{"name":"2021 22nd International Symposium on Quality Electronic Design (ISQED)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 22nd International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED51717.2021.9424316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Statistical timing characterization for modeling On-Chip Variation (OCV) is critical in current technology nodes to avoid over-design and to improve design convergence and predictability. OCV characterization, however, is resource intensive as it involves running millions of Monte-Carlo spice simulations to cover different timing arcs for multiple cells in standard-cell library. We have developed a neural network model that fully comprehends multiple cell types to model cell propagation delays as well as OCV sigma at target process-voltage-temperature (PVT) corners with a significantly reduced number of simulations. The proposed method generates Liberty Variation Format (LVF) models which are the latest and most accurate representation of OCV margin in the industry’s standard tools and flows.On extensive testing with 7 million OCV delay values in 10nm node, we attained 60% reduction in runtime while maintaining prediction-error less than 5% for 99.98% arcs which can be used for early timing integration.
利用深度学习进行OCV建模的快速准确的库生成
在当前的技术节点中,用于模拟片上变异(OCV)的统计时序表征对于避免过度设计、提高设计收敛性和可预测性至关重要。然而,OCV表征是资源密集型的,因为它涉及运行数百万个蒙特卡罗香料模拟,以覆盖标准单元库中多个单元的不同时序弧。我们开发了一个神经网络模型,该模型完全理解多种细胞类型,以模拟细胞传播延迟以及目标过程电压温度(PVT)拐角的OCV sigma,大大减少了模拟次数。该方法生成的自由变化格式(LVF)模型是行业标准工具和流程中最新、最准确的OCV余量表示。在10nm节点上进行了700万个OCV延迟值的广泛测试,我们的运行时间减少了60%,同时在99.98%的弧度中保持了小于5%的预测误差,这可以用于早期时间集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信