{"title":"Differential stacked spiral inductor and transistor layout designs for broadband high-speed circuits","authors":"Quan Pan, Li Sun, C. Yue","doi":"10.1109/RFIT.2014.6933266","DOIUrl":null,"url":null,"abstract":"This paper studies the customized differential stacked spiral inductor (DSSI) and transistor layout designs for broadband high-speed circuits. Compared with the inductor provided in foundry process design kits (PDK), the DSSI increases the inductance density by 3 times and at the same time enlarges the self-resonance frequency by 11.5%. The impact of different differential pair layout styles is compared with post-layout simulations. Moreover, a 4-stage ring oscillator consisting of the DSSI and the half-inter-digitated differential pair layout is fabricated in 65-nm CMOS technology to validate the effectiveness of the presented layout methods. Based on these findings, recommended layout guidelines for broadband circuits are provided.","PeriodicalId":281858,"journal":{"name":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2014.6933266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper studies the customized differential stacked spiral inductor (DSSI) and transistor layout designs for broadband high-speed circuits. Compared with the inductor provided in foundry process design kits (PDK), the DSSI increases the inductance density by 3 times and at the same time enlarges the self-resonance frequency by 11.5%. The impact of different differential pair layout styles is compared with post-layout simulations. Moreover, a 4-stage ring oscillator consisting of the DSSI and the half-inter-digitated differential pair layout is fabricated in 65-nm CMOS technology to validate the effectiveness of the presented layout methods. Based on these findings, recommended layout guidelines for broadband circuits are provided.