Differential stacked spiral inductor and transistor layout designs for broadband high-speed circuits

Quan Pan, Li Sun, C. Yue
{"title":"Differential stacked spiral inductor and transistor layout designs for broadband high-speed circuits","authors":"Quan Pan, Li Sun, C. Yue","doi":"10.1109/RFIT.2014.6933266","DOIUrl":null,"url":null,"abstract":"This paper studies the customized differential stacked spiral inductor (DSSI) and transistor layout designs for broadband high-speed circuits. Compared with the inductor provided in foundry process design kits (PDK), the DSSI increases the inductance density by 3 times and at the same time enlarges the self-resonance frequency by 11.5%. The impact of different differential pair layout styles is compared with post-layout simulations. Moreover, a 4-stage ring oscillator consisting of the DSSI and the half-inter-digitated differential pair layout is fabricated in 65-nm CMOS technology to validate the effectiveness of the presented layout methods. Based on these findings, recommended layout guidelines for broadband circuits are provided.","PeriodicalId":281858,"journal":{"name":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2014.6933266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper studies the customized differential stacked spiral inductor (DSSI) and transistor layout designs for broadband high-speed circuits. Compared with the inductor provided in foundry process design kits (PDK), the DSSI increases the inductance density by 3 times and at the same time enlarges the self-resonance frequency by 11.5%. The impact of different differential pair layout styles is compared with post-layout simulations. Moreover, a 4-stage ring oscillator consisting of the DSSI and the half-inter-digitated differential pair layout is fabricated in 65-nm CMOS technology to validate the effectiveness of the presented layout methods. Based on these findings, recommended layout guidelines for broadband circuits are provided.
宽带高速电路的差动堆叠螺旋电感和晶体管布局设计
本文研究了宽带高速电路中自定义差分堆叠螺旋电感(DSSI)和晶体管的布局设计。与铸造工艺设计套件(PDK)中提供的电感器相比,DSSI的电感密度提高了3倍,同时自谐振频率提高了11.5%。通过布局后仿真,比较了不同差分对布局方式的影响。此外,利用65纳米CMOS技术制作了由DSSI和半互指差分对布局组成的4级环形振荡器,验证了所提出布局方法的有效性。基于这些发现,提供了宽带电路的推荐布局指南。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信